Articles on AlN

As system designers continue to push for higher voltages, greater power density, faster switching speeds, and increased operating frequencies, even today’s leading WBG materials are beginning to encounter performance limitations. This is driving growing interest in ultra-wide bandgap (UWBG) semiconductor platforms, particularly those based on aluminum nitride (AlN), which offers a unique combination of high...Read More

As RF power densities continue to increase, thermal management has become one of the most critical challenges facing next-generation GaN-based devices. Excessive channel temperatures can reduce efficiency, accelerate degradation mechanisms, and ultimately limit device lifetime. While GaN-on-SiC has long been the industry standard for high-power RF applications, emerging GaN-on-AlN architectures offer a compelling path toward...Read More

The rapid growth of artificial intelligence is driving an unprecedented increase in data center power consumption. Industry forecasts project that data centers could consume over 1,200 TWh of electricity annually by 2030, fueled largely by the deployment of large-scale AI training and inference infrastructure. To support these growing computational demands, data center architectures are undergoing...Read More

This application note outlines recommended ex situ and in situ cleaning procedures for two-inch single crystal aluminum nitride (AlN) substrates. These recommendations are intended to help maintain substrate cleanliness and surface quality when incoming inspection, characterization, or other handling activities occur prior to epitaxial processing. CIS_AN102_Cleaning-InstructionsDownloadRead More

This application note provides handling recommendations for aluminum nitride (AlN) substrates intended for subsequent epitaxial growth. Proper handling is essential to preserve the atomically smooth substrate surface and minimize the risk of contamination or damage that could adversely affect epitaxial layer quality. These recommendations are specifically intended for epi-ready, CMP-polished AlN substrates provided by Crystal...Read More

III-nitride semiconductor materials, (Al, In, Ga) N, are excellent wide bandgap semiconductors increasingly evident in emerging optoelectronic, RF and power devices. Among all the III-nitride materials, aluminum nitride (AlN) has the largest bandgap, largest critical electric field, highest thermal conductivity, and most stable high-temperature performance. These superior material properties make AlN a compelling candidate for...Read More

In the rapidly evolving world of semiconductor technology, one material is emerging as a potential game-changer: aluminum nitride (AlN). At Crystal IS, we’ve been at the forefront of AlN substrate technology development. Last year, we announced the production of a 4-inch (100 mm) diameter single-crystal aluminum nitride (AlN) substrate, and just a few months ago, we shared the successful...Read More

The need for robust, high performing devices in the defense market continues to drive innovation and progress in materials research. These devices require high power density, voltage capacity and switching frequency—all while withstanding high junction temperatures (> 200 °C). Bulk Aluminum Nitride (AlN) substrates are an attractive solution for next generation devices due to their...Read More

LEDs which emit UVC wavelengths from 260 nm to 270 nm are increasingly becoming the technology of choice in on-demand and low flow disinfection applications. But for engineers used to designing lamp-based systems, it can be daunting to understand how to correlate LED specs to legacy lamp ratings.  Understanding how to translate data sheet values...Read More

Aluminum Nitride (AlN) is an ultra wide bandgap semiconductor that provides foundational benefits in devices for optoelectronics, RF and power. As the electronics industry evolves, there’s a growing demand for devices that: Operate at higher temperatures Support higher power Offer improved reliability and efficiency AlN meet these requirements better than traditional semiconductors. In the case...Read More