As system designers continue to push for higher voltages, greater power density, faster switching speeds, and increased operating frequencies, even today’s leading WBG materials are beginning to encounter performance limitations. This is driving growing interest in ultra-wide bandgap (UWBG) semiconductor platforms, particularly those based on aluminum nitride (AlN), which offers a unique combination of high...Read More

This application note outlines recommended ex situ and in situ cleaning procedures for two-inch single crystal aluminum nitride (AlN) substrates. These recommendations are intended to help maintain substrate cleanliness and surface quality when incoming inspection, characterization, or other handling activities occur prior to epitaxial processing. CIS_AN102_Cleaning-InstructionsDownloadRead More

This application note provides handling recommendations for aluminum nitride (AlN) substrates intended for subsequent epitaxial growth. Proper handling is essential to preserve the atomically smooth substrate surface and minimize the risk of contamination or damage that could adversely affect epitaxial layer quality. These recommendations are specifically intended for epi-ready, CMP-polished AlN substrates provided by Crystal...Read More

The need for robust, high performing devices in the defense market continues to drive innovation and progress in materials research. These devices require high power density, voltage capacity and switching frequency—all while withstanding high junction temperatures (> 200 °C). Bulk Aluminum Nitride (AlN) substrates are an attractive solution for next generation devices due to their...Read More