III-nitride semiconductor materials, (Al, In, Ga) N, are excellent wide bandgap semiconductors increasingly evident in emerging optoelectronic, RF and power devices. Among all the III-nitride materials, aluminum nitride (AlN) has the largest bandgap, largest critical electric field, highest thermal conductivity, and most stable high-temperature performance. These superior material properties make AlN a compelling candidate for...Read More

Aluminum Nitride (AlN) is an ultra wide bandgap semiconductor that provides foundational benefits in devices for optoelectronics, RF and power. As the electronics industry evolves, there’s a growing demand for devices that: Operate at higher temperatures Support higher power Offer improved reliability and efficiency AlN meet these requirements better than traditional semiconductors. In the case...Read More