III-nitride semiconductor materials, (Al, In, Ga) N, are excellent wide bandgap semiconductors increasingly evident in emerging optoelectronic, RF and power devices. Among all the III-nitride materials, aluminum nitride (AlN) has the largest bandgap, largest critical electric field, highest thermal conductivity, and most stable high-temperature performance. These superior material properties make AlN a compelling candidate for...Read More

In the rapidly evolving world of semiconductor technology, one material is emerging as a potential game-changer: aluminum nitride (AlN). At Crystal IS, we’ve been at the forefront of AlN substrate technology development. Last year, we announced the production of a 4-inch (100 mm) diameter single-crystal aluminum nitride (AlN) substrate, and just a few months ago, we shared the successful...Read More

The need for robust, high performing devices in the defense market continues to drive innovation and progress in materials research. These devices require high power density, voltage capacity and switching frequency—all while withstanding high junction temperatures (> 200 °C). Bulk Aluminum Nitride (AlN) substrates are an attractive solution for next generation devices due to their...Read More