III-nitride semiconductor materials, (Al, In, Ga) N, are excellent wide bandgap semiconductors increasingly evident in emerging optoelectronic, RF and power devices. Among all the III-nitride materials, aluminum nitride (AlN) has the largest bandgap, largest critical electric field, highest thermal conductivity, and most stable high-temperature performance. These superior material properties make AlN a compelling candidate for...Read More

In the rapidly evolving world of semiconductor technology, one material is emerging as a potential game-changer: aluminum nitride (AlN). At Crystal IS, we’ve been at the forefront of AlN substrate technology development. Last year, we announced the production of a 4-inch (100 mm) diameter single-crystal aluminum nitride (AlN) substrate, and just a few months ago, we shared the successful...Read More

The need for robust, high performing devices in the defense market continues to drive innovation and progress in materials research. These devices require high power density, voltage capacity and switching frequency—all while withstanding high junction temperatures (> 200 °C). Bulk Aluminum Nitride (AlN) substrates are an attractive solution for next generation devices due to their...Read More

LEDs which emit UVC wavelengths from 260 nm to 270 nm are increasingly becoming the technology of choice in on-demand and low flow disinfection applications. But for engineers used to designing lamp-based systems, it can be daunting to understand how to correlate LED specs to legacy lamp ratings.  Understanding how to translate data sheet values...Read More

Aluminum Nitride (AlN) is an ultra wide bandgap semiconductor that provides foundational benefits in devices for optoelectronics, RF and power. As the electronics industry evolves, there’s a growing demand for devices that: Operate at higher temperatures Support higher power Offer improved reliability and efficiency AlN meet these requirements better than traditional semiconductors. In the case...Read More

Crystal IS has produced its one hundredth 100 mm bulk Aluminum Nitride (AlN) wafer from its new 100 mm pilot-production line. With an initial capacity of 1,250 substrates a year, this pilot line achievement demonstrates the yield, uniformity, and repeatability at scale of Crystal IS’ bulk AlN platform for next-generation high-performance electronic and optoelectronic devices....Read More

Crystal IS Materials Advances 100 mm AlN Substrates to Enable the Next Generation of UVC, RF, and Power Devices Crystal IS Materials has announced a strategic shift to discontinue UVC LED device production and focus on advancing aluminum nitride (AlN) substrate technology—the foundational material for high‑performance UVC LEDs and a growing range of RF and...Read More

Crystal IS Materials today announced a major technology milestone with the production of its one hundredth 100 mm Aluminum Nitride (AlN) wafer from its pilot-production line. This achievement represents a significant step forward in the development of advanced ultra-wide bandgap semiconductor materials and reinforces the Capital Region’s role as a national center for next‑generation semiconductor...Read More

GREEN ISLAND, N.Y. Crystal IS, an Asahi Kasei company, today announced the successful production of a 4-inch (100 mm) diameter single-crystal aluminum nitride (AlN) substrate. This is the first reported aluminum nitride substrate at this size and demonstrates the scalability of Crystal IS processes for growing AlN bulk single-crystals to meet production demands for this...Read More

Crystal IS, an Asahi Kasei company, today announced a significant advancement in its manufacturing capabilities with the production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99% usable area. The achievement not only signifies a leap forward for Crystal IS in terms of total addressable market, but it also serves as a testament...Read More