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ADVANCED SUBSTRATE TECHNOLOGY

Advanced 
Materials 

for Critical
Applications

High-performance single-crystal aluminum nitride substrates engineered for optoelectronic, RF and power applications.

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LOW IMPURITY

< 1017 C, O, Si

HIGH CRYSTALINE QUALITY

< 105 DD

Latest News

CIS Materials announces new 100 mm pilot production line.

New technical paper published: XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates.

Join us at IEEE RAPID 2026.

CIS Materials expands focus on AlN subtrate

OUR PRODUCT

Single-Crystal AlN Substrates

Premium aluminum nitride substrates engineered for demanding applications in optoelectronics, power and advanced communications. Our substrates deliver unmatched thermal performance and electrical isolation.

Key Specifications

  • Thermal Conductivity: ≥ 300 W/mK
  • Diameter Range: 50.8 mm – 100 mm
  • Surface Roughness: Sub-nm SSP or DSP
  • Shape/Flatness: Industry-accepted metrics
  • Miscut: 0.2 degrees (0-4 degrees custom)
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HIGH CRYSTALINE QUALITY:

< 105 DD

APPLICATIONS

Applications

Optoelectronics

Ultrawide bandgap substrates engineered for next-generation UVC LEDs and deep UV lasers.

 

  • Native AlN substrates enable low‑defect epitaxial growth
  • Superior internal quantum efficiency enables improved WPE
  • Supports reliable, long-life systems
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RF & Microwave

Ultrawide bandgap Aluminum Nitride substrates engineered for today’s GaN‑on‑AlN HEMTs and tomorrow’s low‑gallium RF technologies.

 

  • Enables high‑performance GaN‑on‑AlN HEMTs
  • Supports higher power and efficiency
  • Foundation for low‑gallium RF devices
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Power Electronics

Ultrawide bandgap Aluminum Nitride substrates designed for next‑generation power electronics in AI and hyperscale data centers.

 

  • Enables high‑voltage, high‑density power conversion
  • Superior thermal performance for dense architectures
  • Supports reliable, always‑on data infrastructure
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INDUSTRIES

Industries We Work With

U.S. Defense Systems

AlN–based devices enable higher‑power, longer‑range, and more reliable systems that support critical defense priorities around improved logistics, resilient communications, and next‑generation radar and sensing platforms.

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AI & Data Infrastructure

AlN‑based power devices enable a step‑change in data center power density, reducing footprint while increasing capacity by an order of magnitude to support the rapidly growing performance and scalability demands of AI and hyperscale infrastructure.

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Power Grid

AlN provides the scalability, efficiency, and thermal robustness needed to support the Department of Energy’s vision for next‑generation power devices and energy storage systems that can strengthen and modernize the electrical grid.

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Water Treatment

AlN‑based optoelectronic devices enable high‑density, high‑efficiency UV arrays that make mercury‑free disinfection practical at utility scale, supporting safer, more sustainable water treatment solutions.

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ABOUT US

About Crystal IS Materials

Crystal IS Materials is a global leader in single crystal Aluminum Nitride innovation, advancing the materials science that enables entirely new capabilities in optoelectronic, RF, and power devices. Our team is leading the development of 100 mm diameter substrates to unlock what’s next for advanced electronics.

 

We partner with leading research institutions and critical infrastructure and technology providers to deliver substrates that meet the demanding specifications around advanced communications, power electronics and deep UV photonics.

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QUALITY & COMPLIANCE

Compliance & Quality Systems

ISO 9001:2015 Certified
U.S.-Based Manufacturing
Full Material Traceability
Export Control Compliant

RESOURCES

Documentation

Document

100 mm diameter AlN substrate for R&D applications.

Research-grade substrates available for development of next generation AlN-based technologies in the fields of optoelectronics, power electronics and other devices.

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Document

Progress in Large-Diameter Single Crystal AlN

Traditionally, AlN has been used in the optoelectronics market to produce high power UVC LEDs which emit at the 265 nm wavelength—the optimal wavelength for disinfection. AlN substrates with low absorption coefficient in the UV-regime also allow for a more efficient light source for disinfection.

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Document

AlN – Powering Tomorrow’s Technologies

In the rapidly evolving world of semiconductor technology, one material is emerging as a potential game-changer: aluminum nitride (AlN).

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Ready to discuss your project?

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