Crystal IS Materials Advances 100 mm AlN Substrates to Enable the Next Generation of UVC, RF, and Power Devices Crystal IS Materials has announced a strategic shift to discontinue UVC LED device production and focus on advancing aluminum nitride (AlN) substrate technology—the foundational material for high‑performance UVC LEDs and a growing range of RF and...Read More

Crystal IS Materials today announced a major technology milestone with the production of its one hundredth 100 mm Aluminum Nitride (AlN) wafer from its pilot-production line. This achievement represents a significant step forward in the development of advanced ultra-wide bandgap semiconductor materials and reinforces the Capital Region’s role as a national center for next‑generation semiconductor...Read More

GREEN ISLAND, N.Y. Crystal IS, an Asahi Kasei company, today announced the successful production of a 4-inch (100 mm) diameter single-crystal aluminum nitride (AlN) substrate. This is the first reported aluminum nitride substrate at this size and demonstrates the scalability of Crystal IS processes for growing AlN bulk single-crystals to meet production demands for this...Read More

Crystal IS, an Asahi Kasei company, today announced a significant advancement in its manufacturing capabilities with the production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99% usable area. The achievement not only signifies a leap forward for Crystal IS in terms of total addressable market, but it also serves as a testament...Read More

Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99% usable area, based on current requirements for UVC LEDs, with manufacturing to take place in the United States. The ultra-wide bandgap and high thermal conductivity of AlN help to improve device reliability...Read More