Crystal IS Materials
AlN substrate and device research overview
Title | Material Category | Publishing Year | Link |
Advancing Bulk Growth of 100 mm AlN by Physical Vapor Transport | SUBSTRATE | 2026 | |
268-nm AlGaN deep-ultraviolet LEDs on AlN substrates with 280 mW output power and wall-plug efficiency above 10% at 500 | OPTOELECTRONICS | 2026 | |
Low-Resistance and Current-Collapse-Free MOVPE-Grown Pseudomorphic AlN/GaN/AlN HEMTs on AlN substrates | RF | 2025 | |
Development of 100 mm AlN Single-Crystal Growth and Subsequent Substrate Preparation | SUBSTRATE | 2025 | |
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates | RF | 2025 | |
From atomic-scale understanding to wafer-scale growth: Delta-doped AlN/GaN/AlN XHEMTs on single-crystal AlN by molecular beam epitaxy | RF | 2025 | |
Enhanced thermal performance of AlN/GaN/AlN XHEMTs on bulk AlN by suppression of phonon-boundary scattering | RF | 2025 | |
Improvement of light extraction and carrier injection in far UV-CLEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer | DIODE | 2025 | |
Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping | RF | 2024 | |
AlN/AlGaN heterojunction field-effect transistors with ahigh-AlN-mole-fraction Al0.72Ga0.28N channel grown onsingle-crystal AlN substrate by metalorganic chemical vapor deposition | RF | 2024 | |
Milliwatt-power sub-230-nm AlGaN LEDs with >1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection | DIODE | 2023 | |
24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiNx Layer | RF | 2022 |